2002. 7. 9
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SEMICONDUCTOR
TECHNICAL DATA
KRA116S~KRA122S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
R1
R2
COMMON(+)
OUT
IN
TYPE NO.
R1(k )
R2(k )
KRA116S
1
10
KRA117S
2.2
2.2
KRA118S
2.2
10
KRA119S
4.7
10
KRA120S
10
4.7
KRA121S
47
10
KRA122S
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA116S 122S
V
O
-50
V
Input Voltage
KRA116S
V
I
-10, 5
V
KRA117S
-12, 10
KRA118S
-12, 5
KRA119S
-20, 7
KRA120S
-30, 10
KRA121S
-40, 15
KRA122S
-40, 10
Output Current
KRA116S 122S
I
O
-100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA116S KRA117S KRA118S KRA119S KRA120S KRA121S KRA122S
MARK
P2
P4
P5
P6
P7
P8
P9
MAXIMUM RATING (Ta=25 )
Type Name
Marking
Lot No.